Resistive Switching and Non-volatile Memory

Resistive switching is a process in which the resistance state of a structure changes between a high and low level, through the application of an electric field. Conventionally oxide materials are used as an active material in an metal-insulator-metal structure for resistive swtching operation, which occours through the process of formation and rupture of conducting filaments between the electrodes. It has found industrial application in flash storage for high-speed non-volatile memery.

We are looking for ways to find new materials which offer realiable and sustainable swtching efficiency, which is a constant challenge and continueously evolving process.

Related Publications:

  • Karuna Kumari, Ajay D. Thakur and S.J. Ray*-The effect of graphene and reduced graphene oxide in the resistive switching behavior of La0.7Ba0.3MnO3, Materials Today Communication, 2021(DOI: https://doi.org/10.1016/j.mtcomm.2021.102040)



  • Karuna Kumari, Ashutosh Kumar, Dinesh K Kotnees, Jayakumar Balakrishnan, Ajay D. Thakur and S. J. Ray*- Structural and Resistive Switching Behaviour in Lanthanum Strontium Manganite-reduced Graphene Oxide Nanocomposite System, Journal of Alloys and Compounds,815, 152213 (2020)


  • Ashutosh Kumar, Karuna Kumari, S. J. Ray, Ajay D Thakur - Graphene Mediated Resistive Switching and Thermoelectric Behavior in Lanthanum Cobaltate, Journal of Applied Physics, 127, 235103 (2020) [IF: 2.138]


  • K Kumari, A Kumar, AD Thakur, S. J. Ray - Effect of temperature and magnetic field in resistive switching behavior of La0.7Ca0.3MnO3.rGO nano-composite,AIP Conference Proceedings 2220 (1), 080007, 2020


  • Hui, Fei, Enric Grustan‐Gutierrez, Shibing Long, Qi Liu, Anna K. Ott, Andrea C. Ferrari, and Mario Lanza. "Graphene and related materials for resistive random access memories." Advanced Electronic Materials 3, no. 8 (2017): 1600195.