Two-dimensional material based Nanoelectronics

Single electron transistor is a nanoelectronic device with source, drain and gate electrode which works on the method of quantum tunnelling. It has possible applications in Quantum Sensing, Metrology, Charge Detection, Qubit generation, quantum computation and many more. Below is the design of a single electron transistor with a MoS2 layer as an island, which have been observed to offer extreme detection sensitivity for the detection of various gas molecules. In addition to the quantized conduction, the enhanced surface to volume ratio of the 2D materials offer extreme resilience against temperature, doping, orientation etc. during the sensing operation. Such type of devices can be useful for Nanosensing in sub-10 nm architectures.

Related Publications:

  • S. Rani,S.J. Ray*– DNA sensing using graphene and hexagonal boron nitride island based nanosensor, Carbon, 173, 493-500 (2021)

  • S. Rani, S.J. Ray*– Detection of gas molecule using C3N island single electron transistor,Carbon, 144, 235 (2019)

  • S. J. Ray* - First-Principles study of MoS2, Phosphorene and Graphene based Single Electron Transistor for gas sensing applications,Sensors and Actuators B: Chemical, 222, 492-498 (2016)

  • S. J. Ray*, M. V. Kamalakar, R. Chowdhury - Ab-initio studies of Phosphorene island single electron transistor, Journal of Physics: Condensed Matter, 28, 195302 (2016)

  • S. Rani*, S. J. Ray- CO detection on Graphene, Nanomaterials and Energy, 8, 1-4 (2019)